sot-89 plastic-encapsulate transistors transistor (pnp) features z low v ce(sat) z maximum ratings (t a =25 unless otherwise noted) symbol param eter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -32 v v ebo emitter-base voltage -5 v i c continuous collector current -1 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55 a 150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol t e st conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -32 v emitter-base breakdown voltage v (br)ebo i e =-50 a,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.5 a dc current gain h fe v ce =-3v,i c =-100ma 82 390 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.2 -0.5 v transition frequency f t v ce =-5v,i c =-50ma,f=30mhz 150 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 20 30 pf classification of h fe rank p q r range 82-180 120-270 180-390 marking bap baq bar sot-89 1. base 2. collector 3. emitter 1 2 3 i cp* pulsed collector current -2 a
6 l q j o h s x o v h, 3 : p v 2012- 0 willas electronic corp. 2SB1132
-0.1 -1 -10 1 10 100 0 25 50 75 100 125 150 0 100 200 300 400 500 600 -1 -10 -100 -1000 -500 -750 -1000 -1 -10 -100 -1000 -10 -100 -1 -10 -100 10 100 -1 -10 -100 -1000 10 100 1000 -0 -4 -8 -12 -16 -20 -0 -200 -400 -600 -800 -1000 -0 -300 -600 -900 -1200 -1 -10 -100 -1000 -20 c ob c ib f=1mhz i e =0/i c =0 t a =25 9 & % 9 ( % & r e & l e 2 2 capacitance c (pf) reverse voltage v (v) collector power dissipation p c (mw) ambient temperature t a ( ) 3 & 2 2 7 d , & k ) ( 2 2 , & i 7 2 2 =10 t a =100 t a =25 , & 9 % ( v d w 2 2 collector current i c (ma) base-emitter saturation voltage v besat (mv) =10 t a =100 t a =25 , & 9 & ( v d w 2 2 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) -400 common emitter v ce =-5v t a =25 collector current i c (ma) transition frequency f t (mhz) 300 7 \ s l f d o & k d u d f w h u l v w l f v t a =100 t a =25 common emitter v ce =-3v collector current i c (ma) dc current gain h fe common emitter t a =25 9 & ( , & 2 2 collector current i c (ma) collector-emitter voltage v ce (v) -5ma -4.5ma -4ma -3.5ma -3ma -2.5ma -2ma -1.5ma -1ma i b =-0.5ma base-emmiter voltage v be (mv) collector current i c (ma) common emitter v ce =-6v t a = 1 0 0 t a = 2 5 9 % ( , & 2 2 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SB1132
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SB1132
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